This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the IIIââ?¬â??V\r\nLab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We = 700 nm). The\r\ntransistor used in the circuit has a 15 Ã?µm long two-finger emitter. This paper describes the complete nonlinear modeling of this\r\nDHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology\r\nused to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in\r\namplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm\r\noutput power and a phase noise of -80 dBc/Hz at 100 KHz offset from carrier have been measured.
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